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At a concentration level of 72 times, the quantum dot solar cell developed by Professor Okada Tosaka from the University of Tokyo's Advanced Science and Technology Research Center achieved a remarkable quantum efficiency of 26.8%. This is a significant improvement over previous records, where the highest efficiency for this type of cell was only 21.2% at a 1,000-fold concentration.
The new design features an open-circuit voltage of 2.05 V, a short-circuit current density of 1193.3 mA/cm², and a fill factor of 78.8%, as measured by the UL Taiwan laboratory using a 5mm square sample. These performance metrics highlight the potential of quantum dot solar cells in high-concentration environments.
One of the main challenges with quantum dot solar cells is managing heat buildup under concentrated light, which can reduce efficiency. Unlike traditional multi-junction cells, quantum dot cells generate higher currents but also more heat, leading to power loss when concentration levels increase. To address this, Professor Okada introduced a novel structure that helps suppress heat while maintaining high efficiency.
Specifically, he added an InGaP layer above the quantum dot layer. This layer absorbs some of the light that would otherwise be absorbed by the GaAs material surrounding the quantum dots. By connecting the InGaP and quantum dot layers in series, the current is reduced, and the voltage is increased, resulting in better overall performance.
Looking ahead, Professor Okada plans to test even higher concentration ratios to further evaluate how well the design manages heat and maintains efficiency. This research could pave the way for more efficient and cost-effective solar energy solutions in the future.
(Reporter: He Jiji, "Nikkei Electronics")
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