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China University of Science and Technology cooperates to prepare a two-dimensional black phosphorus field effect transistor
In a recent breakthrough, Professor Chen Xianhui from the University of Science and Technology of China has made significant progress in the development of two-dimensional field-effect transistors. Collaborating with researchers from Fudan University, including Professors Zhang Yuanbo, Feng Donglai, and Wu Hao, the team successfully fabricated ultra-thin two-dimensional black phosphorus field-effect transistors. The findings were published online on March 2nd in *Nature Nanotechnology*.
The discovery of monolayer graphene marked the beginning of two-dimensional materials as a promising class for future electronics. However, one major limitation of graphene is its lack of an energy gap, which makes it unsuitable for use as a semiconductor switch in computer circuits. This has led scientists to explore alternative materials, such as silicene and germanene, but these face challenges in stability when exposed to air, limiting their practical applications. As a result, there is a growing need to discover and characterize new two-dimensional materials that are both functional and stable.
To address these challenges, Chen Xianhui’s team partnered with Zhang Yuanbo’s group to develop a field-effect transistor based on two-dimensional black phosphorus (phosphorene), which possesses an energy gap. Compared to other 2D materials, black phosphorus is more stable, though it is difficult to grow under normal conditions. Ye Guojun, a Ph.D. student in the group, managed to synthesize high-quality black phosphorus single crystals under extreme high-temperature and high-pressure conditions, opening the door for further research and application.
Using mechanical exfoliation techniques, the team transferred thin flakes of black phosphorus onto a silicon wafer coated with a layer of silicon dioxide. Based on this, they fabricated functional field-effect transistors. When the thickness of the black phosphorus material was less than 7.5 nm, the devices exhibited excellent performance at room temperature, with a leakage current modulation of up to 10âµ. The IV curves showed strong current saturation, and the charge carrier mobility was found to be dependent on the material's thickness. At 10 nm, the mobility reached as high as ~1,000 cm² Vâ»Â¹ sâ»Â¹.
Moreover, black phosphorus-based transistors have direct band gaps in the infrared range, making them a promising candidate for next-generation nanoelectronics and optoelectronic devices. The work has attracted widespread attention in the international scientific community, with *Nature* featuring a review article that highlights the significance of this research.
This study was supported by several key funding bodies, including the National Natural Science Foundation of China, the Ministry of Science and Technology’s major research plan, and the Chinese Academy of Sciences’ pilot project.