Recently, Professor Chen Xianhui from the University of Science and Technology of China has made significant progress in the development of two-dimensional field-effect transistors. In collaboration with researchers from Fudan University, including Professors Zhang Yuanbo, Feng Donglai, and Wu Hao, they successfully created a two-dimensional black phosphorus field-effect transistor with nanometer-scale thickness. The findings were published online on March 2nd in the prestigious journal *Nature Nanotechnology*. The discovery of monolayer graphene opened up a new class of materials—two-dimensional crystals—that could potentially revolutionize future electronic technologies. However, graphene lacks a bandgap, which makes it unsuitable for use as a semiconductor switch in computer circuits. This limitation led scientists to explore alternative materials, such as silicene and germanene, but these materials are not stable in air, making them impractical for real-world applications. As a result, there is a growing need to discover and characterize new two-dimensional materials that are both functional and stable. To address this challenge, Professor Chen's team collaborated with Professor Zhang’s group to develop a field-effect transistor based on two-dimensional black phosphorus (phosphorene), which possesses a bandgap. Compared to other two-dimensional materials, black phosphorus is more stable, though its single crystals are difficult to grow under normal conditions. A doctoral student, Ye Guojun, succeeded in producing high-quality black phosphorus single crystals under extreme high-temperature and high-pressure conditions, paving the way for further research and practical applications. Once the single crystals were obtained, the team used mechanical tape to exfoliate thin flakes and transferred them onto a silicon wafer coated with a layer of thermally grown silicon dioxide. Using this method, they fabricated functional field-effect transistors. When the thickness of the black phosphorus material was less than 7.5 nm, the transistors showed excellent performance at room temperature, with a leakage current modulation of up to 10^5. The IV characteristics displayed strong current saturation, and the charge carrier mobility showed a clear dependence on thickness. At 10 nm, the mobility reached an impressive ~1,000 cm²/V·s, indicating great potential for future electronics. Additionally, black phosphorus transistors exhibit a direct bandgap in the infrared range, making them promising candidates for next-generation nanoelectronics and optoelectronic devices. The research has already attracted widespread attention in the international scientific community, with *Nature* featuring a review article that included this work among key studies on two-dimensional black phosphorus field-effect transistors. This groundbreaking research was supported by several major funding agencies, including the National Natural Science Foundation of China, the Ministry of Science and Technology’s Major Research Plan, and the Chinese Academy of Sciences’ Pilot Project. HANDAN ZHONGBAO IMPORT AND EXPORT TRADING CO.,LTD , https://www.hdzbfastener.com